htx4 - - 600 HTX4-600 600v 4a triac v drm = 600 v i t(rms) = 4.0 a 1.t1 2. t2 3. gate ? repetitive peak off- state voltage: 600v ? r.m.s on ?state current (i t(rms) = 4a) ? high commutation dv/dt features htp4-600 2 1 3 to-220 2 1 3 to-220f hts4-600 general description the triac htp4-600 is suitable fo r ac switching application, phase control application such as heater cont rol, motor control, lighting control, and static switching relay. symbol parameter value units absolute maximum ratings (t a =25 ) symbol parameter value units v drm repetitive peak off- state voltage 600 v i t(rms) r.m.s on-state current (ta = 66 ) 4a i tsm surge on-state current (one cycle, 50/60hz, peak, non repetitive) 50hz 30 a 60hz 33 a v gm peak gate voltage 7 v i peak gate current 05 a i gm peak gate current 0 . 5 a p gm peak gate power dissipation 3 w v iso isolation breakdown boltate, ac rm s 1min (hts4-600 only) 1500 v t stg storage temperature range -40 to +125 t j operating temperature -40 to +125 semihow rev.a0,dec 2010
htx4 - electrical characteristics (t =25 ) - 600 symbol parameter test conditions min typ max units i gt gate trigger current v d =6v, r l =10 ? 1+, 1-, 3- 20 ma v gt gate trigger voltage v d =6v, r l =10 ? 1+, 1-, 3- 1.5 v v gd non trigger gate voltage t j =125 , v d =1/2v drm 0.2 v (dv/dt)c critical rate of rise of off-state voltage at communication t j =125 , v d =2/3v drm (di/dt)c=-3a/ms 5.0 v/us i holding current 50 ma electrical characteristics (t a =25 1.0 ma v tm peak on-state voltage it=6a, inst, measurement 1.6 v thermal characteristics symbol parameter test conditions min typ max units r jc thermal resistance junction to case 2.8 /w semihow rev.a0,dec 2010
htx4 - typical characteristics - 600 1 10 a te current [a] e voltage [v] fig 1. gate characteristics fig 2. on-state voltage 10 1 10 2 10 3 0.1 1 on-st a on-state voltage [v] gat e gate current [ma] fig 3. gate trigger voltage vs. junction temperature fig 4. on-state current vs. maximum power dissipation dissipation [w] power rms on-state current [a] junction temperature [ ] fig 5. on-state current vs. allowable case temperature fig 6. surge on-state current rating (non-repetitive) -state current [a] e case temp [ ] 10 0 10 1 10 2 surge on time [cycles] allowabl e rms on-state current [a] semihow rev.a0,dec 2010
htx4 - typical characteristics - 600 s ient thermal d ance [ /w] fig 7. gate trigger current vs. junction temperature fig 8. transient thermal impedance tran s impe d time [sec] junction temperature [ ] fig 9. gate trigger characteristics test circuit semihow rev.a0,dec 2010
htx4 - package dimension - 600 6 0 0 . 2 0 9.90 0.20 4.50 0.20 htp4 htp4- -600 600 (to (to- -220) 220) 3 . 6 0 2 0 .20 6.50 0.20 1.30 0.20 9.19 0.20 2.80 0. 2 15.70 0 240 0 20 13.08 0.20 3.02 0.20 1.27 0.20 1.52 0.20 2 . 40 0 . 20 2.54typ 0.80 0.20 0.50 0.20 2.54typ semihow rev.a0,dec 2010
htx4 - package dimension - 600 0.20 254 0 20 0.20 0 2 0 hts4 hts4- -600 600 (to (to- -220f) 220f) 0.70 0.20 0.20 0 .20 6.68 0.20 2 . 54 0 . 20 3 . 1 8 0 . 2 3.30 15.87 0 12.42 0.20 276 0 20 080 020 1.47max 050 020 2 . 76 0 . 20 9.75 0.20 2.54typ 0 . 80 0 . 20 0 . 50 0 . 20 2.54typ semihow rev.a0,dec 2010
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